| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform a wafer test without destroying an oxide film directly under bonding pads. <P>SOLUTION: A semiconductor device comprises: a semiconductor substrate 9; five wiring layers formed on the semiconductor substrate 9; a plurality of bonding pads 5e that are formed on an uppermost fifth wiring layer 5 in the five wiring layers and in which a part of each of them is exposed; and active elements, for example, transistor elements that are formed on the semiconductor substrate 9, are disposed at the positions overlapping the bonding pads 5e under the pads in plan view, and are electrically connected to the bonding pads 5e. A buffer film 7 in which any wiring layer of the five wiring layers is not provided is formed directly under the bonding pads 5e. <P>COPYRIGHT: (C)2012,JPO&INPIT |
