发明名称 |
PROGRAMMABLE FETs USING Vt-SHIFT EFFECT AND METHODS OF MANUFACTURE |
摘要 |
Programmable field effect transistors (FETs) are provided using high-k dielectric metal gate Vt shift effect and methods of manufacturing the same. The method of controlling Vt shift in a high-k dielectric metal gate structure includes applying a current to a gate contact of the high-k dielectric metal gate structure to raise a temperature of a metal forming a gate stack. The temperature is raised beyond a Vt shift temperature threshold for providing an on-state.
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申请公布号 |
US2012043622(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US20100858094 |
申请日期 |
2010.08.17 |
申请人 |
CARTIER EDUARD A.;LIANG QINGQING;LIANG YUE;WANG YANFENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CARTIER EDUARD A.;LIANG QINGQING;LIANG YUE;WANG YANFENG |
分类号 |
H01L29/68;G06F9/45;H01L21/336 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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