RARE-EARTH-DOPED ALUMINUM-GALLIUM-OXIDE FILMS IN THE CORUNDUM-PHASE AND RELATED METHODS

摘要

The invention provides a means for preparing rare-earth-doped a-(Al1-xGax)2O3 films by molecular beam epitaxy (MBE), The invention provides a composition of matter, rare-earth-doped a-(Al1-xGax)2O3 films, and methods to provide thin films of this material. The invention also provides a means to prepare thin film rare-earth-doped a-(Al1-xGax)2O3, including Nd: a-(Al1-xGax)2O3, for use in solid state lasers. Rare-earth-doped a-Ga2O3 and rare-earth-doped alloys of a-a2O3 and a-?l2O3 with the same single-crystal structure independent of Ga/Al ratio are disclosed herein.