SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing variation in performance characteristics of an element even if an SiN film is used as a protection film, and to provide a method of manufacturing the same.

SOLUTION: A semiconductor device 2 comprises: a semiconductor substrate 11 including a drain-drift region 12; a field oxide film 17 formed on the drain-drift region 12; a gate electrode 18; an interlayer insulating film 20; metal layers 21 and 22; an SiN film 23 covering these layers; and a PSG film 24 that is formed on the SiN film 23 by a CVD method using O3-TEOS and contains carbon.

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