| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode element in which even donor impurities and acceptor impurities of the same combination can change the wavelength region of light or expand the wavelength region, and to provide a method of manufacturing the same, a single crystal SiC material and a method of producing the same. <P>SOLUTION: A light-emitting diode element 1 comprises: a semiconductor light-emitting part; and an SiC part 2. The Sic part 2 consists of single crystal SiC added with donor impurities and acceptor impurities, includes a porous region 24 where the porous state changes continuously, and emits visible light by donor-acceptor pair emission when the excited by light emitted from the semiconductor light-emitting part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
