| 发明名称 |
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device, which can improve a threshold voltage lowered by nitriding treatment. <P>SOLUTION: A method for manufacturing a silicon carbide semiconductor device comprises: a nitriding treatment step for applying nitriding treatment to a silicon carbide substrate 2 with a gate insulating film 11 mainly composed of silicon dioxide formed on a silicon carbide drift layer 6 including a base region 7 and a source region 8; and a heat treatment step for heat-treating the silicon carbide substrate 2 in an atmosphere containing dinitrogen monoxide in a temperature from 600°C to 1000°C after the nitriding treatment step. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012038919(A) |
申请公布日期 |
2012.02.23 |
| 申请号 |
JP20100177712 |
申请日期 |
2010.08.06 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TANIOKA HISAKAZU;FURUHASHI AKIYUKI;WATANABE TOMOKATSU;IMAIZUMI MASAYUKI |
| 分类号 |
H01L29/78;H01L21/318;H01L21/336;H01L29/12 |
主分类号 |
H01L29/78 |
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