| 摘要 |
An ESD protection device (101) has a semiconductor substrate (20) having input/output electrodes (21A, 21B) and a rewiring layer (30) formed on the surface of the semiconductor substrate. An ESD protection circuit is formed on the surface of the semiconductor substrate (20), and the input/output electrodes (21A, 21B) are connected to that ESD protection circuit. The rewiring layer (30) includes interlayer wiring (24A, 24B), in-plane wiring (25A, 25B) and post electrodes (27A, 27B). One end of the interlayer wiring (24A or 24B), which is provided in the direction of thickness, is connected to the input/output electrode (21A or 21B) provided on the surface of the semiconductor substrate (20), and the other end is connected to one end of the in-plane wiring (25A or 25B) extending in the direction of the plane. Furthermore, the center-to-center distance (A) between the first and second post electrodes (27A, 27B) is greater than the center-to-center distance (B) between the first and second input/output electrodes (21A, 21B). |
