发明名称 MEMORY CONTROLLER, FLASH MEMORY SYSTEM INCLUDING MEMORY CONTROLLER, AND CONTROL METHOD OF FLASH MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To more efficiently perform smoothing for succession from processing for calculating a syndrome to processing for deriving an error position polynomial; and processing for deriving the error position polynomial, in a memory controller including a decryption circuit. <P>SOLUTION: Mutual correspondence of a region in a data holding circuit, a region in a syndrome holding circuit, and a region in a coefficient holding circuit is defined. A syndrome calculated based on data held in a first region in the data holding circuit is held in a second region serving as a region in the syndrome holding circuit that corresponds to the first region. A coefficient calculated based on the syndrome held in the second region is held in a third region serving as a region in the coefficient holding circuit that corresponds to the second region. A bit error of the data held in the first region is corrected based on the coefficient held in the third region. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038226(A) 申请公布日期 2012.02.23
申请号 JP20100179938 申请日期 2010.08.11
申请人 TDK CORP 发明人
分类号 G06F12/16 主分类号 G06F12/16
代理机构 代理人
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