发明名称 POSITIVE RESIST MATERIAL, AND PATTERN FORMATION METHOD UTILIZING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist material with a high sensitivity, a high resolution, a small line width roughness, and an excellent post-exposure pattern shape, especially a positive resist material using a high polymer suitable as a base resin of a chemical amplification positive resist material, and to provide a pattern formation method. <P>SOLUTION: The positive resist material contains (as a base resin) a high polymer with the weight-average molecular weight 1,000-500,000 which at least contains a repeating unit a having a group represented by the following general formula (1), and a repeating unit b which is a carboxyl group with the hydrogen atom substituted by an acid labile group. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012037867(A) 申请公布日期 2012.02.23
申请号 JP20110118830 申请日期 2011.05.27
申请人 SHIN ETSU CHEM CO LTD 发明人
分类号 G03F7/039;C08F220/10;H01L21/027 主分类号 G03F7/039
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