| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a thin film deposition device which enables reduction of labor for maintenance works and shortening of downtime. <P>SOLUTION: The method of cleaning a thin film deposition system 1 comprises a heating step and a cleaning step. In the heating step, at least one of the inside of a reaction tube 2 and the inside of an exhaust tube 16 is heated to a predetermined temperature. In the cleaning step, at least one of the inside of the reaction tube 2 and the inside of the exhaust tube 16, which has been heated, is supplied with cleaning gas containing oxygen gas and hydrogen gas, and thus the cleaning gas is heated to the predetermined temperature, whereby the oxygen gas and hydrogen gas contained in the cleaning gas are activated. The activated oxygen gas and hydrogen gas then remove deposition adhering to the inside of the thin film deposition system 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
