| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent increase of threshold voltage of an MIS transistor that comprises a gate insulating film having a high dielectric constant film containing adjusting metal in a semiconductor device including MIS transistors. <P>SOLUTION: A semiconductor device comprises an MIS transistor nTr. The MIS transistor comprises an active area 10a surrounded by an element separation area 11 on a semiconductor substrate 10, a gate insulating film 16a formed on the active area and the element separation area and having a high dielectric constant film 15a, and a gate electrode 19a formed on the gate insulating film. At at least a part of portions of the gate insulating film that are positioned in the element separation area has nitride areas 20x and 20y. When the nitrogen concentration of nitrogen included in the nitride areas 20x and 20y is represented as n1 and n2, and the nitrogen concentration of nitrogen included in a part positioned on the active area in the gate insulating film as n, relational expressions n1>n and n2>n are satisfied. <P>COPYRIGHT: (C)2012,JPO&INPIT |
