| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor thin film, a semiconductor device, and a semiconductor thin film manufacturing apparatus, by which a semiconductor thin film including linear crystal grains with a length of more than 10 μm, whose two axes of crystal orientations are substantially aligned, can be formed, and a semiconductor device with high mobility and uniform characteristics can be provided. <P>SOLUTION: Through continuous-wave laser crystallization with a diffraction type laser beam homogenizer, a laser spot is made linear or rectangular, thereby forming laser intensity distribution that is substantially homogeneous in a length direction. Two or more of the laser spots are aligned at appropriate intervals in a direction where the laser spot is short. The multiple laser spots are delivered on a silicon thin film and scanned in the direction where the laser spot is short, thereby performing lateral-direction crystallization of the silicon thin film. Thus, a polycrystalline silicon thin film including crystal grains whose two axes of crystal orientations are substantially aligned can be formed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
