HEAT TREATMENT METHOD FOR WAFER, METHOD FOR PRODUCING SILICON WAFER, SILICON WAFER, AND HEAT TREATMENT APPARATUS

摘要

The present invention relates to a heat treatment method for a wafer, wherein a heat treatment at a predetermined temperature is carried out by heating a wafer with a heat source, while supporting a main surface (a first main surface) of the wafer with a supporting member, said heat treatment being accompanied by rapid heating and cooling. The heat treatment method for a wafer is characterized in that the heat treatment is carried out, while controlling the heating source so that the temperature of the first main surface, which is supported by the supporting member, is higher by 1-25°C than another main surface (a second main surface) of the wafer, said second main surface being on the reverse side of the first main surface. Consequently, there is provided a heat treatment method for a wafer, wherein slip dislocation that would be generated from the position at which a silicon wafer is supported can be surely suppressed when the silicon wafer is subjected to a heat treatment.