发明名称 |
RARE-EARTH-DOPED ALUMINUM-GALLIUM-OXIDE FILMS IN THE CORUNDUM-PHASE AND RELATED METHODS |
摘要 |
The invention provides a means for preparing rare-earth-doped α-(Al1-xGax)2O3 films by molecular beam epitaxy (MBE). The invention provides a composition of matter, rare-earth-doped α-(Al1-xGax)2O3 films, and methods to provide thin films of this material. The invention also provides a means to prepare thin film rare-earth-doped α-(Al1-xGax)2O3, including Nd: α-(Al1-xGax)2O3, for use in solid state lasers. Rare-earth-doped α-Ga2O3 and rare-earth-doped alloys of α-Ga2O3 and α-Al2O3 with the same single-crystal structure independent of Ga/Al ratio are disclosed herein. |
申请公布号 |
US2012045661(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US201113213065 |
申请日期 |
2011.08.18 |
申请人 |
KUMARAN RAVEEN;TIEDJE THOMAS;WEBSTER SCOTT E.;PENSON SHAWN |
发明人 |
KUMARAN RAVEEN;TIEDJE THOMAS;WEBSTER SCOTT E.;PENSON SHAWN |
分类号 |
C09K11/80;B32B9/00;C30B23/02;G02B6/02 |
主分类号 |
C09K11/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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