发明名称 |
TANTALUM-BASED ELECTRODE STACK |
摘要 |
An electronic device includes a metal-insulator-metal capacitive device. In connection with an example embodiment, a metal-insulator-metal (MIM) capacitor device is in a substrate having a surface and a three dimensional structure with high aspect ratio sidewalls. The MIM capacitor device includes a first capacitor electrode including a platinum group metal (PGM)-based layer and a Ta-based layer that is between the PGM-based layer and one of the sidewalls. The MIM capacitor also includes a second capacitor electrode and an insulator material between the first and second electrodes. |
申请公布号 |
US2012044612(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US20100861785 |
申请日期 |
2010.08.23 |
申请人 |
BESLING WILLEM F. A.;ROEST AARNOUD L.;REIMANN KLAUS;VAN LEUKEN-PETERS LINDA;NXP B.V. |
发明人 |
BESLING WILLEM F. A.;ROEST AARNOUD L.;REIMANN KLAUS;VAN LEUKEN-PETERS LINDA |
分类号 |
H01G4/008;C23C14/34 |
主分类号 |
H01G4/008 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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