| 摘要 |
<p>A dry etching method comprises: a first etching step of introducing a fluorine-containing etching gas into a vacuum chamber (10), making the etching gas into plasma with an antenna (41) and forming a depression (55) on a substrate (Sb); and a second etching step of supplying a deposition gas into the vacuum chamber (10) while continuously reducing the etching gas present within the vacuum chamber (10), and forming a protective film (57) on at least an inside surface of the depression (55) with the deposition gas, which has been made into plasma, while proceeding with the etching of the depression (55) with the etching gas, which has been made into plasma.</p> |
