MAGNETIC TUNNEL JUNCTION ELEMENT

摘要

This magnetic tunnel junction element comprises a first ferromagnetic layer, a second ferromagnetic layer, and an insulting layer that is provided between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is configured of MgO to which fluorine is added. The amount of added fluorine in the insulating layer is from 0.00487 atm% to 0.15080 atm% (inclusive). This element comprises an MgO insulating layer and still exhibits higher magnetoresistance change characteristics in comparison to conventional elements that comprise MgO insulating layers. The amount of added fluorine is preferably from 0.00487 atm% to 0.05256 atm% (inclusive).