APPARATUS FOR MANUFACTURING COMPOUND SEMICONDUCTOR, METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR, AND COMPOUND SEMICONDUCTOR

摘要

Provided is an apparatus for manufacturing a compound semiconductor, which forms a compound semiconductor layer using a metal organic chemical vapor deposition method. The apparatus is characterized in that: the apparatus is provided with a reaction container, a holder, which is disposed in the reaction container and has placed thereon a subject, on which the layer is to be formed, said subject having facing up the subject surface where the layer is to be formed, and a raw material supply port, through which the raw material gas of the compound semiconductor is supplied to the inside of the reaction container from the outside; the holder is in contact with the lower surface of the subject, said contact being inside of the outer circumferential portion of the subject from the center of the upper surface of the holder; and that the holder has a supporting section, which supports the subject such that a predetermined interval is maintained between the upper surface of the holder and the lower surface of the subject. In the manufacture of the compound semiconductor using the MOCVD method, temperature distribution on the substrate surface to be deposited with a compound semiconductor crystal, and deviation from a target value of an average wavelength are suppressed using the apparatus.