发明名称 |
METHOD FOR PASSIVATING SILICON SURFACE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for passivating a silicon surface which provides excellent passivation quality on the silicon surface. <P>SOLUTION: A method for passivating a silicon surface includes: (a) a step of cleaning the silicon surface including a step of subjecting the silicon surface to a sequence of steps wherein the final step is a chemical oxidation step resulting in a hydrophilic silicon surface; (b) a step of drying the cleaned silicon surface using an advanced drying technique; and (c) a step of depositing an oxide layer such as an ALDAl<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer on the silicon surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012039088(A) |
申请公布日期 |
2012.02.23 |
申请号 |
JP20110135169 |
申请日期 |
2011.06.17 |
申请人 |
IMEC;KATHOLIEKE UNIV LEUVEN KU LEUVEN R&D |
发明人 |
BALTO FIRMUNG;OUD ROTHSCHILD;TWAN BEARDA |
分类号 |
H01L21/316;C23C16/02;C23C16/40;C23C16/56;H01L21/304;H01L31/04 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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