发明名称 METHOD FOR PASSIVATING SILICON SURFACE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for passivating a silicon surface which provides excellent passivation quality on the silicon surface. <P>SOLUTION: A method for passivating a silicon surface includes: (a) a step of cleaning the silicon surface including a step of subjecting the silicon surface to a sequence of steps wherein the final step is a chemical oxidation step resulting in a hydrophilic silicon surface; (b) a step of drying the cleaned silicon surface using an advanced drying technique; and (c) a step of depositing an oxide layer such as an ALDAl<SB POS="POST">2</SB>O<SB POS="POST">3</SB>layer on the silicon surface. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012039088(A) 申请公布日期 2012.02.23
申请号 JP20110135169 申请日期 2011.06.17
申请人 IMEC;KATHOLIEKE UNIV LEUVEN KU LEUVEN R&D 发明人 BALTO FIRMUNG;OUD ROTHSCHILD;TWAN BEARDA
分类号 H01L21/316;C23C16/02;C23C16/40;C23C16/56;H01L21/304;H01L31/04 主分类号 H01L21/316
代理机构 代理人
主权项
地址