发明名称 BACKSCATTER REDUCTION IN THIN ELECTRON DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a camera having improved electron detection. <P>SOLUTION: In a direct electron detector, backscattering of electrons into the detector volume from below a sensor is prevented. In some embodiments, an empty space is maintained below the sensor. In other embodiments, a structure below the sensor includes a geometric structure having multiple high aspect-ratio channels extending to or from the sensor or having angled surfaces to detect electrons that pass through the sensor. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038726(A) 申请公布日期 2012.02.23
申请号 JP20110165160 申请日期 2011.07.28
申请人 FEI CO 发明人 GERRIT CORNELIS VAN HOFTEN;YURI ROFF;FRANK JEROEN PIETER SCHUURMANS;MICHAEL ALVIN WILLIAM STEKELENBURG;RICHARD HENDERSON;ABDUL RAFI FARUKI;GREGORY JAMES MACMILLAN;RENATO ANDREA DANILO TURCHETTA;NIKOLA CAROLLO GUERRINI
分类号 H01J37/244 主分类号 H01J37/244
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