发明名称 VACUUM PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable film formation processing on a large substrate by suppressing heat deformation of a ridge electrode and the substrate. <P>SOLUTION: A vacuum processing apparatus comprises: a discharge chamber 2 which includes a ridge waveguide having an exhaust-side ridge electrode 21a and a substrate-side ridge electrode 21b for generating plasma; a pair of converters which transmit high-frequency power to the discharge chamber 2 after converting it into a TE mode, which is a basic transmission mode of a square waveguide, to thereby generate the plasma between the exhaust-side ridge electrode 21a and the substrate-side ridge electrode 21b; a uniform-heating thermoregulator 40 which is arranged on an outer surface side of the substrate-side ridge electrode 21b and uniformly raises temperature; and a heat-absorbing thermoregulation unit 50 which is arranged on an outer surface side of the exhaust-side ridge electrode 21a and controls the heat flux in the substrate thickness direction of a substrate S to be subjected to plasma processing. The substrate S is placed between the exhaust-side ridge electrode 21a and the substrate-side ridge electrode 21b before plasma processing is performed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038596(A) 申请公布日期 2012.02.23
申请号 JP20100178108 申请日期 2010.08.06
申请人 MITSUBISHI HEAVY IND LTD 发明人 SASAGAWA EISHIRO;TAKEUCHI YOSHIAKI;MIYAZONO NAOYUKI;OTSUBO EIICHIRO;NAKAO TEIKO
分类号 H05H1/46;C23C16/505;H01L21/205 主分类号 H05H1/46
代理机构 代理人
主权项
地址