| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition and method for polishing an insulating layer in ILD and STI processes, exhibiting an improved removal rate of insulating layer, as well as improved storage stability. <P>SOLUTION: There are provided a chemical mechanical polishing composition and a method for chemical mechanical polishing using the chemical mechanical polishing composition. The chemical mechanical polishing composition includes, as initial components: water; 0.1 to 40 wt.% of abrasive grains having an average particle size of 5 to 150 nm; 0.001 to 1 wt% of an adamantyl substance represented by a specified formula; 0 to 1 wt.% of a divalent quaternary substance represented by the formula (I); and 0 to 1 wt.% of a quaternary ammonium compound. (In the formula, each X is independently N or P, R<SP POS="POST">1</SP>is a C<SB POS="POST">1</SB>to C<SB POS="POST">15</SB>alkyl group or the like, R<SP POS="POST">2</SP>to R<SP POS="POST">7</SP>are each independently H or the like, and the anion is any one or more anions that balance + charges of the cation.) <P>COPYRIGHT: (C)2012,JPO&INPIT |
