| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory element with low power consumption and high reliability. <P>SOLUTION: An amorphous semiconductor layer 13 is provided between a semiconductor layer 14 and a solid electrolyte layer 16 containing a movable ion. A conduction type of the semiconductor layer 14 is different from that of the amorphous semiconductor layer 13. When a set or reset voltage is applied, the movable ion moves between the solid electrolyte layer 16 and the amorphous semiconductor layer 13, and the conduction type of the amorphous semiconductor layer 13 is changed. Thereby, writing and elimination of data are performed. Since electrical resistance is also changed together with the conduction type, a high resistance separation characteristic can be obtained. Since this change in the amorphous semiconductor layer 13 is classified as phase transition of the second kind, radiation and absorption of latent heat, temperature rise exceeding the melting point of the amorphous semiconductor layer, and volume change are not associated, and low power consumption and high reliability are realized. <P>COPYRIGHT: (C)2012,JPO&INPIT |
