| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor circuit board, a manufacturing method thereof, and a semiconductor device, which are capable of obtaining a high-performance semiconductor element using a compound semiconductor while reducing the amount of a compound semiconductor material. <P>SOLUTION: A semiconductor circuit board has a transistor formed substrate 10 and a circuit formed substrate 50. The transistor formed substrate 10 is a GaN substrate, and a BJT40 is formed on its surface. The rear face of the transistor formed substrate 10 is smooth and has a contact region. The circuit formed substrate 50 is composed of a material other than a compound semiconductor, and has no semiconductor active element. The circuit formed substrate 50 has a smooth surface, contact regions 52 and 54 embedded so as to be exposed from the surface, and a passive circuit (not shown). The transistor formed substrate 10 and the circuit formed substrate 50 are directly connected to each other without interposing a film such as an insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
