SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

In order to improve the characteristics of a semiconductor device and those of a Schottky barrier diode, a semiconductor device is configured of: a laminated body (H), which has at least one heterojunction section wherein a first film and a second film respectively having different forbidden band widths are laminated; a dummy laminated body (D) composed of a laminated material having the same layers as those in the laminated body (H); a trench (G) provided between the laminated body (H) and the dummy laminated body (D); a first electrode (SE), which is disposed to extend from the upper portion of the laminated body (H) to the upper portion of the dummy laminated body (D), including the inside of the trench, to be in contact with the first side wall of the laminated body (H), and which is connected to the laminated body (H) by Schottky junction; and a second electrode (OHE), which is disposed to be in contact with a second side wall facing the first side wall of the laminated body (H). Since the dummy laminated body (D) is left, the trench (G) is provided between the dummy laminated body and the laminated body (H), and the side wall contact is achieved by means of the first electrode (SE) applied in the trench, probability of generating defects at the trench bottom portion at the time of etching the laminated body (H) can be reduced, and a reverse leakage current can be reduced.