| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a new structure that can hold a memory content even under a situation where no electric power is supplied, and that has no restriction for the number of times of writing. <P>SOLUTION: In a semiconductor device, a plurality of memory cells configuring a memory cell array are divided into a plurality of blocks every for a plurality of rows. A common bit line is electrically connected with a divided bit line via a selection transistor in each block. Each memory cell has a first transistor including a first channel formation region, a second transistor including second channel formation region, and a capacity element. The source line is connected with a first source electrode. The divided bit line is connected with a first drain electrode and a second source electrode. The word line is connected with one electrode of the capacity element. The signal line is connected with a second gate electrode. A first gate electrode, a second drain electrode, and the other electrode of the capacity element are connected with each other. <P>COPYRIGHT: (C)2012,JPO&INPIT |
