发明名称 VACUUM PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus capable of performing stable plasma-processing even for a large substrate by suppressing thermal deformation of a ridge electrode and the substrate. <P>SOLUTION: The vacuum processing apparatus includes: an electrical discharge chamber 2 as a ridge waveguide having ridge electrodes 21a, 21b that are formed in a flat plate shape and arranged parallel and opposite to each other while plasma is generated therebetween; a pair of converters which consist of ridge waveguides that have a pair of ridge parts provided on both ends adjacent thereto and arranged opposite to each other, convert the high frequency power into TE mode, transmit the power to the electrical discharge chamber 2, and generate plasma between the ridge electrodes 21a, 21b; a uniformly heating temperature controller 11 which is installed parallel to the ridge electrode 21b with a space outside the ridge electrode, and uniformly raises the temperature of a substrate S after a substrate S to be plasma-processed is set; and a heat-absorbing temperature control unit 12 which is installed outside the ridge electrode 21a to control the heat flux passing through the sheet thickness direction of the ridge electrode 21a and the substrate S to be plasma-processed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012036451(A) 申请公布日期 2012.02.23
申请号 JP20100178194 申请日期 2010.08.06
申请人 MITSUBISHI HEAVY IND LTD 发明人
分类号 C23C16/509;H01L21/205;H01L31/04;H05H1/46 主分类号 C23C16/509
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