| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance manufacturing stability of a semiconductor device having a guard ring. <P>SOLUTION: The semiconductor device 100 comprises: a silicon substrate provided with an element formation region 101 and a guard ring 120 surrounding the outer periphery thereof; and an interlayer insulating film provided on the silicon substrate to cover the upper part of the guard ring 120 entirely. The guard ring 120 includes an N well 103 provided in the neighborhood of the element formation surface of the silicon substrate, and an N+ region provided on the surface layer of the N well. Planar shape of the N well 103 including a corner 119 is annular. Via holes 105 penetrating the interlayer insulating film are provided over the entire circumference of a region excepting the upper part of the corner 119 out of the region of the interlayer insulating film above the N well 103, and the via hole 105 is not provided in the region above the corner 119. <P>COPYRIGHT: (C)2012,JPO&INPIT |
