| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and a method of manufacturing the same, which can increase the yield. <P>SOLUTION: The nonvolatile semiconductor memory device according to an embodiment comprises: a laminate having interelectrode insulating films and electrode films alternately stacked in a first direction; semiconductor pillars piercing the laminate in the first direction; a memory layer provided between each electrode film and each semiconductor pillar and extending in the first direction; a first insulating film provided between the memory layer and the semiconductor pillar and extending in the first direction; and a second insulating film provided between each electrode film and the memory layer and extending in the first direction. The second insulating film protrudes between the electrode films. <P>COPYRIGHT: (C)2012,JPO&INPIT |
