发明名称 |
MULTILAYER FILM FORMATION METHOD AND FILM DEPOSITION APPARATUS USED WITH THE METHOD |
摘要 |
A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw material gases of differing compositions. A film formation apparatus is provided having at least first and second film deposition portions along a transfer path of the substrate, and having a supply/recovery portion for the substrate at either end of the transfer path; continuously transferring the substrate along the transfer path at a first speed during a first transfer and film deposition to form a plurality of stacked layers including first and second layers; and continuously transferring the substrate along the transfer path at a second speed during a second transfer and film deposition to form a third layer having the third composition that differs from those of the first and second layers.
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申请公布号 |
US2012045864(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US201113212571 |
申请日期 |
2011.08.18 |
申请人 |
WADA TAKEHITO;FUJI ELECTRIC CO., LTD. |
发明人 |
WADA TAKEHITO |
分类号 |
H01L21/20;C23C16/455;C23C16/458;C23C16/52 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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