发明名称 MULTILAYER FILM FORMATION METHOD AND FILM DEPOSITION APPARATUS USED WITH THE METHOD
摘要 A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw material gases of differing compositions. A film formation apparatus is provided having at least first and second film deposition portions along a transfer path of the substrate, and having a supply/recovery portion for the substrate at either end of the transfer path; continuously transferring the substrate along the transfer path at a first speed during a first transfer and film deposition to form a plurality of stacked layers including first and second layers; and continuously transferring the substrate along the transfer path at a second speed during a second transfer and film deposition to form a third layer having the third composition that differs from those of the first and second layers.
申请公布号 US2012045864(A1) 申请公布日期 2012.02.23
申请号 US201113212571 申请日期 2011.08.18
申请人 WADA TAKEHITO;FUJI ELECTRIC CO., LTD. 发明人 WADA TAKEHITO
分类号 H01L21/20;C23C16/455;C23C16/458;C23C16/52 主分类号 H01L21/20
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