发明名称 |
CAPACITOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.
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申请公布号 |
US2012043595(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US201113156371 |
申请日期 |
2011.06.09 |
申请人 |
CHANG DONG-RYUL;SHIN HWA-SOOK |
发明人 |
CHANG DONG-RYUL;SHIN HWA-SOOK |
分类号 |
H01L29/94;H01L21/336 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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