发明名称 METHODS FOR FORMING A HYDROGEN FREE SILICON CONTAINING DIELECTRIC FILM
摘要 Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF4, SiCl4, Si2Cl6, and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.
申请公布号 US2012045904(A1) 申请公布日期 2012.02.23
申请号 US201113214161 申请日期 2011.08.20
申请人 CHOI SOO YOUNG;APPLIED MATERIALS, INC. 发明人 CHOI SOO YOUNG
分类号 H01L21/314;H01L21/316;H01L21/318 主分类号 H01L21/314
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