| 摘要 |
Memory devices, memory arrays, and methods of operation of memory arrays are disclosed. In one such memory device, a parallel selection architecture includes a control element, such as a selection transistor, in parallel with a variable resistance memory cell. Biasing of the selection transistor enables access to the memory cell for reading, programming, and/or erasing. Programming and erasing of the memory cell is accomplished through a change of resistance of the memory cell. |
