发明名称 METHOD FOR FABRICATING AN INTEGRATED-PASSIVES DEVICE WITH A MIM CAPACITOR AND A HIGH-ACCURACY RESISTOR ON TOP
摘要 The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate (102) at least one integrated MIM capacitor (114) having a top capacitor electrode (118) and a bottom capacitor electrode (112) at a smaller distance from the substrate than the top capacitor electrode; fabricating an electrically insulating first cover layer (120) on the top capacitor electrode, which first cover layer partly or fully covers the top capacitor electrode and is made of a lead-containing dielectric material; thinning the first cover layer; fabricating an electrically insulating second cover layer (124) on the first cover layer, which second cover layer partly or fully covers the first cover layer and has a dielectric permittivity smaller than that of the first cover layer; and fabricating an electrically conductive resistor layer (126) on the second cover layer, which resistor layer has a defined ohmic resistance.
申请公布号 US2012045881(A1) 申请公布日期 2012.02.23
申请号 US201013264816 申请日期 2010.04.14
申请人 ROEST AARNOUD LAURENS;VAN LEUKEN-PETERS LINDA;NXP B.V. 发明人 ROEST AARNOUD LAURENS;VAN LEUKEN-PETERS LINDA
分类号 H01L21/02 主分类号 H01L21/02
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