发明名称 BiTi BASED OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a BiTi based oxide sputtering target which can stably perform sputtering even at a high output, and has reduced cracks, and a method for producing the same. <P>SOLUTION: The BiTi based oxide sputtering target contains a metal oxide phase including Bi and Ti, and has a thermal conductivity of &ge;1.4 W/mk. Further, the method for producing the sputtering target includes: a step of pulverizing the oxide of Bi and the oxide of Ti and mixing them to produce mixed powder; a step of calcining the mixed powder so as to be calcined powder; a step of adding boron oxide of 1 to 9 mol% (0.4 to 3.6 at% expressed in terms of boron) to the calcined powder, and disintegrating and mixing the same so as to be added calcined powder; and a step of heating the added calcined powder in a vacuum or an inert gas atmosphere while applying pressure thereto, and performing sintering. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012036433(A) 申请公布日期 2012.02.23
申请号 JP20100176065 申请日期 2010.08.05
申请人 MITSUBISHI MATERIALS CORP 发明人 SAITO ATSUSHI
分类号 C23C14/34;C04B35/475 主分类号 C23C14/34
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