| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a practical light-emitting device equipped with a plurality of high power semiconductor light-emitting elements and having high light extraction efficiency. <P>SOLUTION: The light-emitting device comprises a base substrate, a first substrate, a second substrate, a first semiconductor light-emitting element, and a second semiconductor light-emitting element. The first and second substrates are provided on the principal surface of the base substrate, and have first and second reflection regions that have optical reflectance higher than that of the principal surface of the base substrate. Power of 1 W or more can be input, respectively, to the first and second semiconductor light-emitting elements. Assuming the area of a surface of the semiconductor light-emitting element facing the substrate is S, and the area of the reflection region of the substrate is R, following relation is satisfied; (S+100t<SP POS="POST">2</SP>)≤R≤(S+10000t<SP POS="POST">2</SP>). The interval L of semiconductor light-emitting elements satisfies a relation; 100t≤L≤10000t. <P>COPYRIGHT: (C)2012,JPO&INPIT |
