| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce element dimension of a semiconductor device including a Dt-MOS transistor. <P>SOLUTION: A semiconductor device comprises a silicon substrate 21, an element separation region 21I, an element region 21DNW including a first well of first conductivity type defined by the element separation region, a contact region 21P+1 of second conductivity type that is opposite to the first conductivity type, a gate electrode extending between the contact region and the element region in the element separation region from above the element region via a gate insulation film, a source diffusion region of the second conductivity type, a drain diffusion region of the second conductivity type, a first insulation region formed in contact with a lower end part of the source diffusion region, a second insulation region formed in contact with a lower end part of the drain diffusion region, and a via plug for electrically connecting the gate electrode and the contact region. The first well is electrically connected to the contact region via the silicon substrate below the element separation region part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
