AMORPHOUS SILICON NITRIDE FILM AND ITS MANUFACTURING METHOD, GAS BARRIER FILM, AND ORGANIC ELECTROLUMINESCENCE ELEMENT AND ITS MANUFACTURING METHOD, AND SEALING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a high-density amorphous silicon nitride film which exhibits a sufficient gas barrier property by a simple method.

SOLUTION: In a plasma CVD method using high frequency discharge, the amorphous silicon nitride film is formed by using mixed gas containing silane gas, hydrogen gas, and at least one of ammonium gas or nitrogen gas while the distance between electrodes is 50-100 mm, and the flow rate ratio (H2/SiH4) of hydrogen gas to silane gas is 0.5-3.0.

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