| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a magnetic memory element that is operable at a high speed with a low current. <P>SOLUTION: A magnetic memory element includes: a storage layer that is a vertical magnetization film and whose magnetization direction changes in response to information; and a reference layer that is a vertical magnetization film provided for the storage layer with a non-magnetic layer in-between and whose magnetization direction is fixed as a reference for stored information, information being stored by performing magnetization reversal using a spin torque occurring when a current is applied between the storage layer, the non-magnetic layer, and the reference layer. When doing so, a coercive force at a temperature (200°C) at the time of storage to the storage layer is set at 0.7 times or less of that at a room temperature (23°C). Also, an electrode on a one-surface side of the storage layer is formed by, for instance, filling an insulating material having a low thermal conductivity to a center part in a film surface direction of the electrode, thereby setting a thermal conductivity of the center part lower than that of a peripheral part of the electrode. With this construction, temperature rising in a center part of the storage layer is promoted and a magnetization reversal current at the time of storage is lowered. <P>COPYRIGHT: (C)2012,JPO&INPIT |
