发明名称 THIN FILM DEPOSITION VIA CHARGED PARTICLE-DEPLETED PLASMA ACHIEVED BY MAGNETIC CONFINEMENT
摘要 A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency.
申请公布号 KR20120016194(A) 申请公布日期 2012.02.23
申请号 KR20117023837 申请日期 2010.04.26
申请人 OVSHINSKY INNOVATION, LLC 发明人 OVSHINSKY STANFORD
分类号 H01L31/18;H01L31/042 主分类号 H01L31/18
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