发明名称 |
THIN FILM DEPOSITION VIA CHARGED PARTICLE-DEPLETED PLASMA ACHIEVED BY MAGNETIC CONFINEMENT |
摘要 |
A method and apparatus for forming thin film materials via a plasma deposition process in the presence of a magnetic field. A precursor is delivered to a deposition chamber and activated to form a plasma. The plasma may be initiated in the presence of a magnetic field or subjected to a magnetic field after initiation. The plasma includes ionized and neutral species derived from the precursor and the magnetic field manipulates the plasma to effect a reduction in the population of ionized species and an enhancement of the population of neutral species. A thin film material is subsequently formed from the resulting neutral-enriched deposition medium. The method permits formation of thin film materials having a low density of defects. In one embodiment, the thin film material is a photovoltaic material and the suppression of defects leads to an enhancement in photovoltaic efficiency. |
申请公布号 |
KR20120016194(A) |
申请公布日期 |
2012.02.23 |
申请号 |
KR20117023837 |
申请日期 |
2010.04.26 |
申请人 |
OVSHINSKY INNOVATION, LLC |
发明人 |
OVSHINSKY STANFORD |
分类号 |
H01L31/18;H01L31/042 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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