| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve detection of a defect in a memory cell reliably with high efficiency, by eliminating influence of leakage characteristics of the memory cell and of imbalance in output characteristics of a sense amplifier. <P>SOLUTION: A semiconductor memory includes: a plurality of static memory cells 5 arranged in a matrix; word lines WLn commonly connected to memory cells arrayed in a row direction; a pair of bit lines BLO and NBLO which are commonly connected to memory cells arrayed in a column direction so as to form a complementary pair; a sense amplifier which is connected to the pair of the bit lines so as to output data externally; a first precharge circuit 7a and a second precharge circuit 7b which set each pair of the bit lines individually to a first precharge voltage; a third precharge circuit 7c and a fourth precharge circuit 7d which set each pair of the bit lines individually to a second precharge voltage; and a first detection output unit 8a and a second detection output unit 8b which externally output a bit line voltage of the pair of the bit lines individually. The semiconductor memory achieves controlling so as to selectively output either of: data from the sense amplifier; and a bit line voltage from the first detection output unit or the second detection output unit. <P>COPYRIGHT: (C)2012,JPO&INPIT |
