| 摘要 |
Disclosed is a semiconductor device provided with the following: an active layer 6 formed on a substrate 1 having a channel region 6c, a first region 6a located on one side of the channel region 6c, and a second region 6b located on the other side of the channel region 6c; a contact formation layer 8 that is formed on the active layer 6 and that has a separation region 9, a first contact region 8a, and a second contact region 8b, the latter two of which are located on the first region 6a and the second region 6b of the active layer, respectively; a first electrode 10 electrically connected to the first region 6a through the first contact region 8a; a second electrode 11 electrically connected to the second region 6b through the second contact region 8b; and a gate electrode 2 provided with respect to the active layer 6 through a gate insulating layer 4. The active layer 6 and the first and second contact regions 8a and 8b are formed of a microcrystalline silicon film, and the separation region 9 is formed of an oxidized a microcrystalline silicon film. |
