发明名称 |
LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY |
摘要 |
PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions. CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer. |
申请公布号 |
KR20120015651(A) |
申请公布日期 |
2012.02.22 |
申请号 |
KR20100077924 |
申请日期 |
2010.08.12 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
YANG, JEONG HEE;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, JAE MOO;LEE, KEUM JU |
分类号 |
H01L33/44;H01L33/00;H01L33/46 |
主分类号 |
H01L33/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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