发明名称 LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
摘要 PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions. CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer.
申请公布号 KR20120015651(A) 申请公布日期 2012.02.22
申请号 KR20100077924 申请日期 2010.08.12
申请人 SEOUL OPTO DEVICE CO., LTD. 发明人 YANG, JEONG HEE;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, JAE MOO;LEE, KEUM JU
分类号 H01L33/44;H01L33/00;H01L33/46 主分类号 H01L33/44
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