TUNNEL INSULATION LAYER, NON-VOLATILE MEMORY DEVICE, AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A tunnel insulating layer, a non-volatile memory device, and a manufacturing method thereof are provided to remarkably reduce a leakage current by forming an insulating layer separation area including silicon-nitrogen combination by annealing after injecting a nitrogen ion in the tunnel insulating layer. CONSTITUTION: An insulating layer consisting of silicon oxide is formed on the upper side of a substrate(S10). The insulating layer is formed by a low-pressure chemical vapor deposition, a wet oxidation method or a thermal oxidation method. An ion doping layer is formed in the inner side of the insulating layer by injecting an ion in the insulating layer(S20). An insulating layer separation area is formed in the inner side of the insulating layer by annealing the insulating layer in which the ion doping layer is formed(S30).