发明名称 |
Method of forming semiconductor thin film and method of fabricating solar cell |
摘要 |
A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula -(SiR12)n-, where R1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a beta -hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.
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申请公布号 |
US5866471(A) |
申请公布日期 |
1999.02.02 |
申请号 |
US19960773127 |
申请日期 |
1996.12.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
BEPPU, TATSURO;HAYASE, SHUJI;KAMATA, ATSUSHI;SANO, KENJI;HIRAOKA, TOSHIRO |
分类号 |
H01L21/208;H01L31/032;H01L31/0336;H01L31/18;H01L31/20;(IPC1-7):H01L31/18 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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