发明名称 Method of forming semiconductor thin film and method of fabricating solar cell
摘要 A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula -(SiR12)n-, where R1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a beta -hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.
申请公布号 US5866471(A) 申请公布日期 1999.02.02
申请号 US19960773127 申请日期 1996.12.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 BEPPU, TATSURO;HAYASE, SHUJI;KAMATA, ATSUSHI;SANO, KENJI;HIRAOKA, TOSHIRO
分类号 H01L21/208;H01L31/032;H01L31/0336;H01L31/18;H01L31/20;(IPC1-7):H01L31/18 主分类号 H01L21/208
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