SEMICONDUCTOR DEVICE COMPRISING VERTICAL CHANNEL PATTERN

摘要

PURPOSE: A semiconductor device including a vertical channel pattern is provided to seclude oxidant of a wet oxidation process to penetrate into a channel region of a transistor by using an insulating pattern which contacts with a semiconductor substrate. CONSTITUTION: A first cell string(CSTR0) comprises first to third insulating patterns(15,35,55) and a first and conductive pattern(115). A channel hole(60) passes through the conductive pattern. A data storage pattern(75), a vertical channel pattern(84), and a filling pattern(94) are located on the sidewall of the conductive pattern. A concave part(105) is formed on a semiconductor substrate(3) which is contiguous to the first cell string. The concave part is recessed as the predetermined depth(D) from a major surface(MS) of the semiconductor substrate.