CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES, AND SLURRY COMPOSITION
摘要
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.
申请公布号
EP2419922(A1)
申请公布日期
2012.02.22
申请号
EP20100715401
申请日期
2010.04.13
申请人
SINMAT, INC.;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.