| 摘要 |
The present invention provides an annealed wafer obtained by performing rapid thermal annealing on a silicon single crystal wafer sliced from a silicon single crystal ingot in which an entire plane is an OSF region, an N region outside an OSF region, or a mixed region thereof, the silicon single crystal ingot being grown by the Czochralski method, in which RIE defects do not exist in a region having at least a depth of 1 µm from a surface, a good chip yield of a TDDB characteristic is 80% or more, and a depth of a region where an oxygen concentration is decreased due to outward diffusion is within 3 µm from the surface, and a method for producing an annealed wafer. As a result, there is provided a wafer in which the strength of the surface layer thereof is sufficiently kept without a decrease in oxygen concentration of the surface layer due to outward diffusion as much as possible, the defects relevant to oxygen, such as oxide precipitates, COPs, and OSFs, do not exist, the grown-in defects also do not exist, and the TDDB characteristic is superior. |
