发明名称 |
Edge Termination Region for Semiconductor Device |
摘要 |
<p>An isolation region (14) is formed between an edge termination region (2) having deep trenches (20,34) and the central region (4) of a semiconductor field effect transistor. The isolation region includes gate fingers (18) extending from the edge gate trench regions (28) to the gate trenches (6) in the central region (4) to electrically connect the edge gate trench regions to the gate trenches (6) in the central region. The isolation region also includes isolation fingers (22,24) filled with conductive material extending from the edge termination region (2) towards the central region (4) and gate between the gate fingers (18) for reducing the breakdown voltage with a RESURF effect.</p> |
申请公布号 |
EP2421044(A1) |
申请公布日期 |
2012.02.22 |
申请号 |
EP20100172933 |
申请日期 |
2010.08.16 |
申请人 |
NXP B.V. |
发明人 |
PEAKE, STEVEN THOMAS;RUTTER, PHIL |
分类号 |
H01L29/423;H01L29/40;H01L29/78 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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