| 摘要 |
PROBLEM TO BE SOLVED: To facilitate feed to a CVD apparatus, to lower the temp. of a substrate and film formation temp. and to enhance electrical characteristics by using an ether-contg. alkoxide compd. of bismuth as a source of bismuth. SOLUTION: The objective bismuth titanate ferroelectric film is formed using a bismuth compd. represented by the formula as a starting material. In the formula, R1 is H or 1-3C alkyl, R2 is 1-3C alkyl and (n) is an integer of 1-3, preferably R1 and R2 are each methyl and (n) is 1. The bismuth compd. is easily handled in a CVD apparatus, is fed to a film formation chamber at an easily controllable feed rate and enables film formation at a relatively low temp. of <=500 deg.C. In the production of the ferroelectric film, the source of bismuth and a source of titanium are preferably fed in such a way that the molar ratio of Bi to Ti ranges from 0.33 to 2.33.
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